In a strategic move to strengthen AI infrastructure, Samsung Electronics and Advanced Micro Devices have signed a memorandum of understanding to deepen their collaboration on next-generation memory and computing technologies. The announcement was confirmed on March 18.
The agreement focuses on expanding memory chip supplies for AI systems. The signing ceremony was held at Samsung’s chip manufacturing complex in Pyeongtaek, attended by Lisa Su and Young Hyun Jun.
Focus on advanced memory and AI accelerators
The collaboration will include supplying Samsung’s next-generation HBM4 memory for AMD’s upcoming Instinct MI455X AI accelerators. It will also cover optimised DDR5 memory for AMD’s 6th-generation EPYC processors.
Jun said, “From industry-leading HBM4 and next-generation memory architectures to cutting-edge foundry and advanced packaging, Samsung is uniquely positioned to deliver unrivalled turnkey capabilities that support AMD’s evolving AI roadmap.”
Samsung is already a key supplier for AMD, currently providing HBM3E chips for its MI350X and MI355X accelerators.
Powering next-generation AI systems
According to the companies, these technologies will support advanced AI systems that combine AMD Instinct GPUs, AMD EPYC CPUs, and rack-scale designs like the AMD Helios platform.
Samsung’s HBM4 is built using a 6th-gen 10nm class DRAM process with a 4nm logic base die. It delivers speeds of up to 13 Gbps and bandwidth of up to 3.3 TB/s.
Samsung said, “The AMD Instinct MI455X GPU is expected to be the optimum solution for high-performance systems handling AI model training and inference,” when paired with HBM4 memory. The collaboration also allows AMD to diversify its supply chain.
Exploring future chip manufacturing
Both companies are also exploring a potential foundry partnership, where Samsung may manufacture future AMD chips.
The announcement comes during GTC 2026. On March 16, Jensen Huang announced a foundry partnership with Samsung Korea and praised its HBM4 chips for AI performance.
This partnership further strengthens Samsung’s position as a leader in high-bandwidth memory technology.
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